Toshiba Semiconductor and Storage TPN4R712MD,L1Q

Part No.:
TPN4R712MD,L1Q
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Transistors - FETs, MOSFETs - Single
Package:
8-TSON Advance (3.1x3.1)
Datasheet:
TPN4R712MD,L1Q.pdf
Description:
MOSFET P-CH 20V 36A 8TSON
Quantity:

Unit Price:$0

Ext Price:$0

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Product details

1. How to order TPN4R712MD,L1Q on Shenzhen Yongdeli Electronics Co., Ltd.?

Currently, Shenzhen Yongdeli Electronics Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Shenzhen Yongdeli Electronics Co., Ltd. guarantee that TPN4R712MD,L1Q is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the TPN4R712MD,L1Q. All suppliers must pass our qualification reviews before they can publish their products including TPN4R712MD,L1Q on Shenzhen Yongdeli Electronics Co., Ltd.; we pay more attention to the channels and quality of TPN4R712MD,L1Q products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the TPN4R712MD,L1Q price and inventory displayed accurate?

The price and inventory of TPN4R712MD,L1Q fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

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Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of TPN4R712MD,L1Q?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TPN4R712MD,L1Q we delivered, we will accept the replacement or return of the TPN4R712MD,L1Q only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TPN4R712MD,L1Q.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as TPN4R712MD,L1Q pin diagram, TPN4R712MD,L1Q datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image TPN4R712MD,L1Q SSM3J356R,LF SSM3J372R,LF SSM3J351R,LF SSM6J507NU,LF
Part Number TPN4R712MD,L1Q SSM3J356R,LF SSM3J372R,LF SSM3J351R,LF SSM6J507NU,LF
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series U-MOSVI U-MOSVI U-MOSVI U-MOSVI U-MOSVI
ProductStatus Active Active Active Active Active
FETType P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V 20 V 20 V 20 V 20 V
Current-ContinuousDrain(Id)@25°C 36A (Tc) 36A (Tc) 36A (Tc) 36A (Tc) 36A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
RdsOn(Max)@IdVgs 4.7mOhm @ 18A, 4.5V 4.7mOhm @ 18A, 4.5V 4.7mOhm @ 18A, 4.5V 4.7mOhm @ 18A, 4.5V 4.7mOhm @ 18A, 4.5V
Vgs(th)(Max)@Id 1.2V @ 1mA 1.2V @ 1mA 1.2V @ 1mA 1.2V @ 1mA 1.2V @ 1mA
GateCharge(Qg)(Max)@Vgs 65 nC @ 5 V 65 nC @ 5 V 65 nC @ 5 V 65 nC @ 5 V 65 nC @ 5 V
Vgs(Max) ±12V ±12V ±12V ±12V ±12V
InputCapacitance(Ciss)(Max)@Vds 4300 pF @ 10 V 4300 pF @ 10 V 4300 pF @ 10 V 4300 pF @ 10 V 4300 pF @ 10 V
FETFeature - - - - -
PowerDissipation(Max) 42W (Tc) 42W (Tc) 42W (Tc) 42W (Tc) 42W (Tc)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
In Stock:202

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