| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
C3M0120100KSICFET N-CH 1000V 22A TO247-4L |
2,957 | $13.78 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5 nC @ 15 V | ±15V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRLM120ATFMOSFET N-CH 100V 2.3A SOT223-4 |
6,300 | $0.29 |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.3A (Tc) | 5V | 220mOhm @ 1.15A, 5V | 2V @ 250µA | 15 nC @ 5 V | ±20V | 440 pF @ 25 V | - | 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
NTH4L080N120SC1SICFET N-CH 1200V 29A TO247-4 |
232 | $14.45 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 29A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1670 pF @ 800 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
SIS415DNT-T1-GE3MOSFET P-CH 20V 35A PPAK1212-8 |
2,872 | $0.33 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 2.5V, 10V | 4mOhm @ 20A, 10V | 1.5V @ 250µA | 180 nC @ 10 V | ±12V | 5460 pF @ 10 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
C3M0060065JSICFET N-CH 650V 36A TO263-7 |
1,664 | $14.91 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 36A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | +15V, -4V | 1020 pF @ 600 V | - | 136W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount |
|
SIS698DN-T1-GE3MOSFET N-CH 100V 6.9A PPAK1212-8 |
2,468 | $0.33 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.9A (Tc) | 6V, 10V | 195mOhm @ 2.5A, 10V | 3.5V @ 250µA | 8 nC @ 10 V | ±20V | 210 pF @ 50 V | - | 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
C3M0060065DSICFET N-CH 650V 37A TO247-3 |
431 | $14.91 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 37A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | +15V, -4V | 1020 pF @ 600 V | - | 150W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
IMZ120R090M1HXKSA1SICFET N-CH 1.2KV 26A TO247-4 |
355 | $15.13 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 15V, 18V | 117mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 21 nC @ 18 V | +23V, -7V | 707 pF @ 800 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
UJ4C075023K3S750V/23MOHM, SIC, CASCODE, G4, T |
442 | $15.55 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 66A (Tc) | 12V | 29mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 306W (Tc) | -55°C ~ 175°C | Through Hole |
|
UJ3C120070K3SSICFET N-CH 1200V 34.5A TO247-3 |
658 | $15.82 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 34.5A (Tc) | 12V | 90mOhm @ 20A, 12V | 6V @ 10mA | 46 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 254.2W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
C3M0065090JSICFET N-CH 900V 35A D2PAK-7 |
8,178 | $16.28 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30 nC @ 15 V | +19V, -8V | 660 pF @ 600 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
NTH4L045N065SC1SILICON CARBIDE MOSFET, NCHANNEL |
192 | $16.52 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 55A (Tc) | 15V, 18V | 50mOhm @ 25A, 18V | 4.3V @ 8mA | 105 nC @ 18 V | +22V, -8V | 1870 pF @ 325 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
MSC035SMA070B4TRANS SJT N-CH 700V 77A TO247-4 |
116 | $16.57 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 77A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 2mA (Typ) | 99 nC @ 20 V | +23V, -10V | 2010 pF @ 700 V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IXTA60N20X4MOSFET ULTRA X4 200V 60A TO-263 |
343 | $11.29 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 21mOhm @ 30A, 10V | 4.5V @ 250µA | 33 nC @ 10 V | ±20V | 2450 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
C3M0075120JSICFET N-CH 1200V 30A D2PAK-7 |
3,648 | $17.72 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51 nC @ 15 V | +19V, -8V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C3M0075120DSICFET N-CH 1200V 30A TO247-3 |
274 | $17.72 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 54 nC @ 15 V | +19V, -8V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SCT20N120SICFET N-CH 1200V 20A HIP247 |
151 | $17.89 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 290mOhm @ 10A, 20V | 3.5V @ 1mA | 45 nC @ 20 V | +25V, -10V | 650 pF @ 400 V | - | 175W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
|
SCT3080KRC14SICFET N-CH 1200V 31A TO247-4L |
563 | $17.95 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 165W | 175°C (TJ) | Through Hole |
|
SIHG018N60E-GE3MOSFET N-CH 600V 99A TO247AC |
918 | $18.03 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 99A (Tc) | 10V | 23mOhm @ 25A, 10V | 5V @ 250µA | 228 nC @ 10 V | ±30V | 7612 pF @ 100 V | - | 524W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXTT11P50MOSFET P-CH 500V 11A TO268 |
2,716 | $12.12 |
RFQ |
Datasheet |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |