| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AON6314MOSFET N-CHANNEL 30V 85A 8DFN |
2,335 | $0.32 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 85A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2V @ 250µA | 20 nC @ 4.5 V | ±12V | 1900 pF @ 15 V | - | 32.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMTH6016LK3Q-13MOSFET N-CH 60V 10.8 TO252 T&R |
3,851 | $0.32 |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 10.8A (Ta), 46.9A (Tc) | 4.5V, 10V | 17mOhm @ 10A, 10V | 3V @ 250µA | 17 nC @ 10 V | ±20V | 864 pF @ 30 V | - | 3.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IXFH12N90PMOSFET N-CH 900V 12A TO247AD |
1,069 | $9.95 |
RFQ |
Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 6.5V @ 1mA | 56 nC @ 10 V | ±30V | 3080 pF @ 25 V | - | 380W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXTP15N50L2MOSFET N-CH 500V 15A TO220AB |
316 | $9.95 |
RFQ |
Datasheet |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 4.5V @ 250µA | 123 nC @ 10 V | ±20V | 4080 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FCA47N60MOSFET N-CH 600V 47A TO3PN |
571 | $9.96 |
RFQ |
Datasheet |
Tube | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 23.5A, 10V | 5V @ 250µA | 270 nC @ 10 V | ±30V | 8000 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
C2M1000170JSICFET N-CH 1700V 5.3A D2PAK |
2,792 | $9.97 |
RFQ |
Datasheet |
Bulk | C2M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5.3A (Tc) | 20V | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13 nC @ 20 V | +25V, -10V | 200 pF @ 1000 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
UJ4C075060K3SSICFET N-CH 750V 28A TO247-3 |
6,869 | $10.01 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 750 V | 28A (Tc) | - | 74mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1422 pF @ 100 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
TPH3206PSGANFET N-CH 600V 17A TO220AB |
138 | $10.37 |
RFQ |
Datasheet |
Tube | - | Not For New Designs | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IMW120R220M1HXKSA1SICFET N-CH 1.2KV 13A TO247-3 |
210 | $10.45 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 13A (Tc) | 15V, 18V | 286mOhm @ 4A, 18V | 5.7V @ 1.6mA | 8.5 nC @ 18 V | +23V, -7V | 289 pF @ 800 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
UJ3C120150K3SSICFET N-CH 1200V 18.4A TO247-3 |
960 | $10.55 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 18.4A (Tc) | 12V | 180mOhm @ 5A, 12V | 5.5V @ 10mA | 30 nC @ 15 V | ±25V | 738 pF @ 100 V | - | 166.7W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IXTH30N60PMOSFET N-CH 600V 30A TO247 |
482 | $10.60 |
RFQ |
Datasheet |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 5V @ 250µA | 82 nC @ 10 V | ±30V | 5050 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPP60R060C7XKSA1MOSFET N-CH 600V 35A TO220-3 |
347 | $10.87 |
RFQ |
Datasheet |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68 nC @ 10 V | ±20V | 2850 pF @ 400 V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
G3R60MT07K750V 60M TO-247-4 G3R SIC MOSFET |
135 | $11.02 |
RFQ |
Datasheet |
Tube | G3R™ | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | - | - | - | - | - | Through Hole |
|
STW34NM60NMOSFET N-CH 600V 29A TO247-3 |
3,481 | $11.10 |
RFQ |
Datasheet |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±25V | 2722 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | Through Hole |
|
FCH041N60EMOSFET N-CH 600V 77A TO247-3 |
448 | $11.61 |
RFQ |
Datasheet |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 41mOhm @ 39A, 10V | 3.5V @ 250µA | 380 nC @ 10 V | ±20V | 13700 pF @ 100 V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IXTA130N15X4MOSFET N-CH 150V 130A TO263AA |
1,562 | $11.66 |
RFQ |
Datasheet |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 130A (Tc) | 10V | 8mOhm @ 65A, 10V | 4.5V @ 250µA | 87 nC @ 10 V | ±20V | 4770 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C3M0120090JSICFET N-CH 900V 22A D2PAK-7 |
7,112 | $11.80 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
UJ4C075033K4S750V/33MOHM, SIC, CASCODE, G4, T |
526 | $11.84 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 47A (Tc) | 12V | 41mOhm @ 30A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IXFH18N90PMOSFET N-CH 900V 18A TO247AD |
300 | $12.05 |
RFQ |
Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 18A (Tc) | 10V | 600mOhm @ 500mA, 10V | 6.5V @ 1mA | 97 nC @ 10 V | ±30V | 5230 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
LSIC1MO120E0160SICFET N-CH 1200V 22A TO247-3 |
1,154 | $12.18 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 20V | 200mOhm @ 10A, 20V | 4V @ 5mA | 57 nC @ 20 V | +22V, -6V | 870 pF @ 800 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |