| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF5800TRPBFMOSFET P-CH 30V 4A MICRO6 |
3,492 | $0.00 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4.5V, 10V | 85mOhm @ 4A, 10V | 1V @ 250µA | 17 nC @ 10 V | ±20V | 535 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF5803D2TRPBFMOSFET P-CH 40V 3.4A 8SO |
2,957 | $0.00 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | FETKY™ | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37 nC @ 10 V | ±20V | 1110 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF5804TRPBFMOSFET P-CH 40V 2.5A MICRO6 |
2,307 | $0.00 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 2.5A (Ta) | 4.5V, 10V | 198mOhm @ 2.5A, 10V | 3V @ 250µA | 8.5 nC @ 10 V | ±20V | 680 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF5805TRPBFMOSFET P-CH 30V 3.8A MICRO6 |
2,663 | $0.00 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.8A (Ta) | 4.5V, 10V | 98mOhm @ 3.8A, 10V | 2.5V @ 250µA | 17 nC @ 10 V | ±20V | 511 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SCT4026DRHRC15750V, 56A, 4-PIN THD, TRENCH-STR |
3,103 | $23.84 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Through Hole |
|
IPW65R075CFD7AXKSA1MOSFET N-CH 650V 32A TO247-3-41 |
3,241 | $12.66 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
SCT4036KEHRC111200V, 43A, 3-PIN THD, TRENCH-ST |
2,897 | $24.23 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 43A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 176W | 175°C (TJ) | Through Hole |
|
SCT4036KRHRC151200V, 43A, 4-PIN THD, TRENCH-ST |
2,760 | $24.23 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 43A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 176W | 175°C (TJ) | Through Hole |
|
IXKR25N80CMOSFET N-CH 800V 25A ISOPLUS247 |
3,110 | $25.64 |
RFQ |
Datasheet |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | 10V | 150mOhm @ 18A, 10V | 4V @ 2mA | 355 nC @ 10 V | ±20V | - | Super Junction | - | -40°C ~ 150°C (TJ) | Through Hole |
|
SCT30N120SICFET N-CH 1200V 40A HIP247 |
3,269 | $25.69 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 2.6V @ 1mA (Typ) | 105 nC @ 20 V | +25V, -10V | 1700 pF @ 400 V | - | 270W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
|
APT40N60JCU2MOSFET N-CH 600V 40A SOT227 |
3,018 | $26.62 |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 70mOhm @ 20A, 10V | 3.9V @ 1mA | 259 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
IXFX66N85XMOSFET N-CH 850V 66A PLUS247-3 |
3,280 | $27.18 |
RFQ |
Datasheet |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 66A (Tc) | 10V | 65mOhm @ 500mA, 10V | 5.5V @ 8mA | 230 nC @ 10 V | ±30V | 8900 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SCT2080KEGC11DIODE N-CH 1200V 40A TO-247AC |
3,348 | $27.25 |
RFQ |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106 nC @ 18 V | +22V, -6V | 2080 pF @ 800 V | - | 262W (Tc) | 175°C (TJ) | Through Hole | |
|
APT51F50JMOSFET N-CH 500V 51A ISOTOP |
2,901 | $30.48 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
IPW65R050CFD7AXKSA1MOSFET N-CH 650V 45A TO247-3-41 |
2,458 | $14.39 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 50mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
IXTK210P10TMOSFET P-CH -100V -210A TO-264 |
3,589 | $30.81 |
RFQ |
Tube | TrenchP™ | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
APT10M11JVRU3MOSFET N-CH 100V 142A SOT227 |
2,572 | $31.76 |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 142A (Tc) | 10V | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300 nC @ 10 V | ±30V | 8600 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
IPP65R050CFD7AAKSA1MOSFET N-CH 650V 45A TO220-3 |
2,093 | $14.83 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 50mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
IXFB44N100PMOSFET N-CH 1000V 44A PLUS264 |
2,746 | $32.29 |
RFQ |
Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 44A (Tc) | 10V | 220mOhm @ 22A, 10V | 6.5V @ 1mA | 305 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXFX52N100XMOSFET N-CH 1000V 52A PLUS247 |
3,454 | $35.45 |
RFQ |
Datasheet |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 52A (Tc) | 10V | 125mOhm @ 26A, 10V | 6V @ 4mA | 245 nC @ 10 V | ±30V | 6725 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |