As the AI wave sweeps the world, AI SoC (System on Chip) chips are deeply applied to consumer electronics, industrial automation, medical equipment, aerospace, smart vehicles and other fields with their high integration, low power consumption, high performance and high computing power, becoming the core force driving modern technological change. As the key support for SoC production and manufacturing, the performance of high-voltage output power directly determines the production capacity and reliability of SoC.
In the advanced semiconductor process of AI SoC, the stable high-voltage power supply system is the main power supply for core semiconductor process technologies such as high-voltage pulse, lithography machine, ion implantation, plasma etching and chemical vapor deposition (CVD).
In the application of high-voltage pulse power supply output, during the etching process, the high-voltage pulse power supply can achieve fine adjustment of plasma density, energy distribution and ion impact frequency by precisely controlling the pulse parameters. The use of high-frequency pulse high-voltage power supply can increase the plasma density without significantly increasing the ion energy, thereby achieving a higher etching rate and better etching selectivity. The high-voltage power supply provides a stable high-voltage output, and its output voltage and current values are relatively constant. It can provide a continuous and stable power supply for the equipment, and can accurately control the parameters of the pulse, such as pulse width, frequency, pulse amplitude, etc.
The lithography machine is one of the most critical equipment in the chip manufacturing process and requires a stable power supply. In the lithography process of chip manufacturing, the lithography machine accurately projects the integrated circuit pattern onto the surface of the wafer coated with photoresist through a series of complex optical principles. By controlling the exposure parameters of the lithography machine, such as exposure intensity, exposure time and wavelength, the photoresist can be accurately exposed, thereby forming a corresponding photoresist pattern on the wafer. Therefore, the high-voltage power supply provides a stable high-voltage drive for the deep ultraviolet (DUV) or extreme ultraviolet (EUV) light source of the lithography machine, ensuring that the light source maintains output power, wavelength and beam stability under high-intensity working conditions. Only when the performance of the light source is stable can the nanometer-level precision transfer of the lithography pattern be achieved, thereby ensuring the yield rate of chip manufacturing and the smooth advancement of advanced processes.
Plasma etching requires a high-voltage power supply to precisely control the electric field so that the doped ions can obtain specific energy and be injected into the semiconductor substrate at a precise angle and depth to achieve directional optimization of the device's electrical performance. During the plasma etching process, high voltage excites the reaction gas to ionize and form plasma, and the impact effect of high-energy ions is used to etch the semiconductor material layer by layer according to the designed pattern. The CVD process relies on a high-voltage power supply to maintain a stable plasma environment, prompting the gaseous precursor to undergo a chemical reaction under high temperature and electric field, and depositing high-quality thin film materials on the surface of the silicon wafer. These advanced semiconductor process equipment cannot do without a stable high-voltage power supply.
ST's 11KW AC/DC high-voltage power supply + 3KW DC/DC high-voltage to low-voltage solution for high-voltage equipment in AI chip advanced process semiconductor factories uses fully isolated drivers to drive SiC in hardware design, and the entire system uses ST's third-generation semiconductor 1200V silicon carbide tubes. The MCU uses the M7 dual-core based on the ARM architecture. The 300MHz computing power of ST Stellar E1 can meet the equipment system requirements of existing AI advanced process semiconductor factories. At the same time, it is equipped with an independent M0 core HSM module to meet the information security requirements of advanced semiconductor equipment and support OTA system upgrades. The 11kW 800V high-voltage output can provide a stable high-voltage power supply with high pulse voltage, and the 3KW high-voltage to low-voltage DCDC has a large current of 200A, which can meet the 12V to 16V low-voltage output requirements on semiconductor equipment. This system solution can provide customers with hardware and software learning and verification of high-voltage systems.
►Scenario application diagram
► Display board photos
►Solution Block Diagram
►Core technology advantages
1. The 11KW high-voltage output power supply architecture is a three-phase totem pole PFC+CLLC
2. The 11KW high-voltage output is adjustable from 500Vdc to 800Vdc
3. The maximum current of the 11KW high-voltage output is 15A
4. The peak efficiency of the 11KW high-voltage output is 96.5%
5. The 3KW high-voltage to low-voltage power supply architecture is a phase-shifted full-bridge
6. The 3KW high-voltage to low-voltage output is adjustable from 12Vdc to 16Vdc
7. The maximum current of the 3KW high-voltage to low-voltage is 200A
8. The peak efficiency of the 3KW high-voltage to low-voltage is 95.2%
9. The entire system series uses ST's third-generation 1200V silicon carbide tube
10. The system uses an ARM M7 dual-core 300MHz computing power MCU to meet the requirements of advanced process semiconductor high-voltage equipment
11. The system MCU has an independent functional safety module HSM with M0
12. Support OTA upgrade
13. Drive full isolation solution
►Solution specifications
1. 11KW AC/DC high voltage output
Input voltage: 304Vac-456Vac
Output voltage: 500Vdc-900Vdc
Output current: 15A Idc maximum
Output power: 11KW maximum
Peak efficiency: 96.5%
2. 3KW DC/DC high voltage/low voltage
Input voltage: 800Vdc
Output voltage: 12Vdc-16Vdc / 200A Idc maximum
Output power: 3KW maximum
Peak efficiency: 95.2%